PART |
Description |
Maker |
BS616LV1010 |
Asynchronous 1M(64Kx16) bits Static RAM
|
BSI
|
BS62LV4000 |
Asynchronous 4M(512Kx8) bits Static RAM
|
BSI
|
BS62LV2565 |
Asynchronous 256K(32Kx8) bits Static RAM From old datasheet system
|
BSI
|
LC35W1000BTS-70U LC35W1000B LC35W1000BTS-10U LC35W |
Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
BS62LV4008 BS62LV4008TI BS62LV4008TC BS62LV4008STC |
From old datasheet system Asynchronous 4M(512Kx8) bits Static RAM Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
|
BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC. Brilliance Semiconducto...
|
BS616LV1623 BS616LV1623TC BS616LV1623TC-55 BS616LV |
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable Asynchronous 16M(2Mx8 or 1Mx16 Switchable) bits Static RAM
|
Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers BSI ETC[ETC] Brilliance Semiconductor
|
TC58FVT160AXB-70 TC58FVB160AXB-70 TC58FVB160AFT-70 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT (2M 8 BITS / 1M 16 BITS) CMOS FLASH MEMORY 16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba Corporation
|
EDD2516AKTA-5-E EDD2516AKTA-5C-E |
256M bits DDR SDRAM (16M words x16 bits, DDR400)
|
Elpida Memory
|
IS42S16400J-6TL |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
IS42S32200L |
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
List of Unclassifed Man...
|
IS42S16400 IS42S16400A 42S16400A |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI Integrated Silicon Solution, Inc N.A.
|